Document Details
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Document Type |
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Article In Journal |
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Document Title |
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Growth and Transport Properties of some Gallium Chalcogenides from the Group M2III X3VI Semiconductor Compounds إنماء و دراسة الخواص الانتقالية لبعض مركبات الجاليوم الشالكوجيندية شبه الموصلة من المجموعة M2III X3VI |
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Subject |
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Growth and Transport Properties of some Gallium Chalcogenides from the Group M2III X3VI Semiconductor Compounds |
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Document Language |
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English |
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Abstract |
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High quality ? – Ga2 S3 single crystal were grown by a modified Bridgman method. The crystals were identified by X-ray diffraction. Measurements of electrical conductivity and Hall effect were performed in the range [ 278 – 563K] and [158 – 496K] for thermoelectric power (TEP). From these measurements the conductivity of the crystals was p-type. The electrical conductivity, Hall mobility, and hole concentration at 300K were found to be about 2.5x10-5 ?-1 cm-1 , 1.67x104 cm2 v-1 s-1 and 9.58x109 cm-3 respectively. The energy gap was found to be 1.75 eV. From the obtained experimental data several physical parameters such as diffusion coefficient, diffusion lengths, effective masses, relaxation time of carriers were estimated. In addition to these pronounced parameters, the efficiency of the thermoelectric element [figure of merit] was evaluated which leads to better application in the field of energy conversion technique. |
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ISSN |
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1012-1319 |
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Journal Name |
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Science Journal |
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Volume |
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23 |
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Issue Number |
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2 |
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Publishing Year |
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1432 AH
2011 AD |
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Article Type |
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Article |
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Added Date |
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Thursday, October 3, 2013 |
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Researchers
| نجات توفيق عباس | Abbas, Najat Tawfeeg | Researcher | | |
| فاطمة باهبري | Bahabri, Fatmah | Researcher | | |
| رقية العريني | Aloraini, Rugaiah | Researcher | | |
| محمد علي أبوزيد | Abozaid, Mohammad Ali | Researcher | | |
| صباح القرني | Algarni, Sabah | Researcher | | |
| وفاء الغامدي | Algamdi, Wafaa | Researcher | | |
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